Research And Investigation Of Inverse Epitaxial Uhf Power Transistors Pdf

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Published: 11.06.2021

Roy, Mark D.

Manuscript received August 8, ; final manuscript received March 14, ; published online May 13,

Physics:Contact resistance

Single-event burnout of power bipolar junction transistors. Experimental evidence of single-event burnout of power bipolar junctions transistors BJTs is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment.

Suhl and W. Concentrating holes and electrons by magnetic fields, Physics Review, vol. Hudson, Jr. Vikulin, M. Glauberman, L.

Well behaved structural and electrical characteristics were found. The electrical series resistance through two of such contacts from metal to metal through the semiconductor contacts increases rapidly for contact sizes below the transfer length of the contact about 0. This resistance increase is critically dependent on the contact resistivity and three-dimensional current flow patterns. This is a preview of subscription content, access via your institution. Rent this article via DeepDyve. Osburn, T. Brat, D.

Influence of Thickness Deviation on crystalline Silicon Solar Cell Performance

Skip to search form Skip to main content You are currently offline. Some features of the site may not work correctly. Carstensa and M. Reutera and J. Cichoszewskia and P.


INVERSE EPITAXIAL UHF POWER TRANSISTORS. 1. INTRODUCTION. This report describes work performed toward the development of an Ultra High.


Short channel Ga0.47In0.53As/Al0.48In0.52As selectively doped field effect transistors

The term contact resistance refers to the contribution to the total resistance of a system which can be attributed to the contacting interfaces of electrical leads and connections as opposed to the intrinsic resistance. This effect is described by the term electrical contact resistance ECR and arises as the result of the limited areas of true contact at an interface and the presence of resistive surface films or oxide layers. ECR may vary with time, most often decreasing, in a process known as resistance creep.

The term contact resistance refers to the contribution to the total resistance of a system which can be attributed to the contacting interfaces of electrical leads and connections as opposed to the intrinsic resistance. This effect is described by the term electrical contact resistance ECR and arises as the result of the limited areas of true contact at an interface and the presence of resistive surface films or oxide layers. ECR may vary with time, most often decreasing, in a process known as resistance creep.

 Похож на китайца. Японец, подумал Беккер. - Бедняга.

Contact resistance

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PDF | The main objective in solar cells realization consists in increasing their “​Research and investigation of inverse epitaxial UHF power transistors”, Air.


GaAs FETs: Device Physics and Modeling

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